collect compare
IRFAC30
Part number:
IRFAC30
describe:
N-CHANNEL HERMETIC MOS HEXFET
package:
Bulk
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 2027
minimum : 63
quantity
unit price
price
63
4.82
303.66
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-204AA, TO-3
  • Supplier Device Package
    TO-204AA (TO-3)
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    2.5Ohm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    38 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    630 pF @ 25 V
  • Power Dissipation (Max)
    75W (Tc)
  • FET Feature
    -